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Shanghai Zing Semiconductor Corporation is committed to research and develop a full set of industrialized wafer production processes for 300 mm silicon wafer including crystal growth, wafering process, epitaxy process, wafer analysis and inspection, which can be used for 40-28 nm advanced technology node in Integrated Circuit. It aims to build a production base, realize the localization for 300 mm silicon wafer, and fully meet the urgent demand of silicon substrates for large-scale integrated circuit production in China.

Shanghai Zing Semiconductor Corporation have provided silicon wafer for mass production to the domestic market as well as international markets. According to customer's requirements, it provides high-quality products, from crystal growth, slicing, grinding, polishing, cleaning to packaging. The whole production process strictly follows the professional quality standards trusted by all the customers. The main products contain 300 mm prime polishing wafer, epitaxy wafer and test wafer.

Product information is as follows:
300mm Epitaxial Wafer

The substrate wafer with single crystal film formed by epitaxial growth is usually called epitaxial wafer. Crystal growth is carried out on the substrate by the method of vapor phase epitaxial deposition, which should in order with the crystal surface of the substrate. Epitaxial silicon chips are widely used in diodes, IGBT power devices, low-power digital and analog integrated circuits and mobile computing communication chips. Zing also provides different types of dopant epitaxial chips, n-type or p-type according to the requirements of customers.

300mm Polished Wafer

A 300 mm polished wafer is a wafer with high purity of silicon. After the single crystal silicon rod is produced, the cylindrical single-crystal rod is cut into thin slices. It is widely used in power devices, digital and analog integrated circuits and memory chips etc. The company also accepts different requirements of customers and produces high-quality silicon wafer that meets the needs of customers.

300mm Test Wafer

The substrate wafer with single crystal film formed by epitaxial growth is usually called epitaxial wafer. By the method of vapor phase epitaxial deposition, the long crystals on the substrate are arranged in order with the crystal surface of the bottom substrate. Epitaxial silicon chips are widely used in diodes, IGBT power devices, low-power digital and analog integrated circuits and mobile computing communication chips. Xinsheng also provides different types of dopant epitaxial chips, n-type or p-type according to the requirements of customers.

Product Specification:
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